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  Datasheet File OCR Text:
 Bulletin I0136J 05/99
IR350DG..HCB SERIES
HIGH POWER RECTIFIER DIODES
Junction Size: Wafer Size: VRRM Class: Passivation Process:
Square 350 mils 4" 600 and 1200 V Glassivated MESA
Reference IR Packaged Part: T70HF Series
Major Ratings and Characteristics
Parameters
VFM VRRM Maximum Forward Voltage Reverse Breakdown Voltage Range
Units
960 mV 600 and 1200 V
Test Conditions
T J = 25C IF = 25A T J = 25C IR = 100A
(1)
(1) Nitrogen flow on die edge.
Mechanical Characteristics
Nominal Back Metal Composition, Thickness Nominal Front Metal Composition, Thickness Chip Dimensions Wafer Diameter Wafer Thickness Maximum Width of Sawing Line Reject Ink Dot Size Ink Dot Location Recommended Storage Environment Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Cr - Ni - Ag (1 KA - 4 KA - 6 KA) 350 x 350 mils (see drawing) 100 mm, with std. < 110 > flat 300 m 130 m 0.25 mm diameter minimum See drawing Storage in original container, in dessicated nitrogen, with no contamination
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1
IR350DG..HCB Series
Bulletin I0136J 05/99
Ordering Information Table
Device Code
IR
1 1 2 3 4 5 6 7 International Rectifier Device Chip Dimension in Mils
350
2
D
3
G
4
12
5
H
6
CB
7
Type of Device: D = Standard Recovery Diode Passivation Process: G = Glassivated MESA Voltage code: Code x 100 = VRRM Metallization: H = Silver (Anode) - Silver (Cathode) Probed Uncut Die
Available Class 06 = 600V 12 = 1200V
Outline Table
All dimensions are in millimeters
2
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IR350DG..HCB Series
Bulletin I0136J 05/99
Wafer Layout
TOP VIEW N 69 Basic Cells
All dimensions are in millimeters
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